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Preliminary Data Sheet
Low VCE(sat) IGBT
Short Circuit SOA Capability
IXSA 16N60 IXSP 16N60
V CES = 600V I C25 = 16A VCE(sat)typ = 1.8V
Symbol VCES VCGR VGES VGEM I C25 I C90 I CM SSOA (RBSOA) tSC (SCSOA) PC TJ TJM Tstg Weight
Test Conditions TJ = 25C to 150C TJ = 25C to 150C; RGE = 1 M Continuous Transient TC = 25C TC = 90C TC = 25C, 1 ms VGE = 15 V, TJ = 125C, RG = 150 Clamped inductive load, L = 300 H VGE = 15 V, V CE = 360 V, TJ = 125C RG = 82 , non repetitive TC = 25C
Maximum Ratings 600 600 20 30 32 16 52 ICM = 32 @ 0.8 VCES 5 100 -55 ... +150 150 -55 ... +150 2 300 260 V V V V A A A A s W C C C g C C
TO-220AB(IXSP)
GC E
TO-263AA
G E TAB G = Gate, E = Emitter, C = Collector, TAB = Collector
Features
l l l
Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Maximum tab temperature for soldering for 10s
International standard package Guaranteed Short Circuit SOA capability
Low VCE(sat) - for low on-state conduction losses l High current handling capability
l
Symbol
Test Conditions
Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 600 3.5 TJ = 25C TJ = 125C 6.5 200 1 100 1.8 2.3 V V A mA nA V
MOS Gate turn-on - drive simplicity l Fast fall time for switching speeds up to 20 kHz Applications
l l l
BVCES VGE(th) ICES I GES VCE(sat)
IC IC
= 250 A, VGE = 0 V = 750 A, VCE = VGE
AC motor speed control Uninterruptible power supplies (UPS) Welding
VCE = 0.8 * VCES VGE = 0 V VCE = 0 V, VGE = 20 V IC = IC90, VGE = 15 V
Advantages
l
High power density
(c) 1997 IXYS All rights reserved
96539A (05/97)
IXSA16N60
Symbol Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 3.3 5.0 50 920 VCE = 25 V, VGE = 0 V, f = 1 MHz 65 14 40 IC = IC90, VGE = 15 V, VCE = 0.5 VCES Inductive load, TJ = 25C IC = 16A, VGE = 15 V, L = 300 H VCE = 0.8 VCES, RG = 22 13 18 30 30 100 310 1.9 Inductive load, TJ = 125C IC = 16A, V GE = 15 V, L = 300 H VCE = 0.8 VCES, RG = 22 30 30 0.12 150 510 3.0 420 470 2.9 S A pF pF pF
Dim.
IXSP16N60
TO-220 AB Outline
gfs IC(on) Cies Coes Cres Qg Qge Qgc td(on) tri td(off) tfi Eoff td(on) tri Eon td(off) tfi Eoff RthJC
I C = IC90; VCE = 10 V, Pulse test, t 300 s, duty cycle 2 % VGE = 15 V, VCE = 10 V
nC nC nC ns ns ns ns mJ ns ns mJ ns ns mJ 1.25 K/W
A B C D E F G H J K M N Q R
Millimeter Min. Max. 12.70 14.93 14.23 16.50 9.66 10.66 3.54 4.08 5.85 2.29 1.15 2.79 0.64 2.54 4.32 0.64 0.51 2.04 6.85 2.79 1.77 6.35 0.89 BSC 4.82 1.39 0.76 2.49
Inches Min. Max. 0.500 0.580 0.560 0.650 0.380 0.420 0.139 0.161 0.230 0.090 0.045 0.110 0.025 0.100 0.170 0.025 0.020 0.080 0.270 0.110 0.070 0.250 0.035 BSC 0.190 0.055 0.030 0.115
TO-263 AA Outline
Note 1: Switching times may increase for VCE (Clamp) > 0.8 * VCES , higher TJ or increased RG
1. 2. 3. 4. Gate Collector Emitter Collector Bottom Side
Min. Recommended Footprint
Dim. A A1 b b2 c c2 D D1 E E1 e L L1 L2 L3 L4 R
(Dimensions in inches and (mm))
Millimeter Min. Max. 4.06 4.83 2.03 2.79 0.51 0.99 1.14 1.40 0.46 0.74 1.14 1.40 8.64 9.65 7.11 8.13 9.65 10.29 6.86 8.13 2.54 BSC 14.61 15.88 2.29 2.79 1.02 1.40 1.27 1.78 0 0.38 0.46 0.74
Inches Min. Max. .160 .190 .080 .110 .020 .039 .045 .055 .018 .029 .045 .055 .340 .380 .280 .320 .380 .405 .270 .320 .100 BSC .575 .625 .090 .110 .040 .055 .050 .070 0 .015 .018 .029
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,486,715 5,381,025

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